The behaviour of ion-implanted tungsten species during anodic oxidation of aluminium

Journal of Physics D: Applied Physics

Volumn 31, Issue 17, 1998, Pages 2083-2090

  Fernandes, J C S ^a   Ferreira, M G S ^a   Soares, J C ^b   Jesus, C M ^c   Rangel, C M ^d   Skeldon, P ^e   Thompson, G E ^e   Zhou, X ^e   Habazaki, H ^f   Shimizu, K ^g  

^a INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^c UNIVERSITY OF LISBON   (Portugal)

^d Inst Nac Engenharia Technologia I   (Portugal)

^e UNIVERSITY OF MANCHESTER   (United Kingdom)

^f TOHOKU UNIVERSITY   (Japan)

^g KEIO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM; AMORPHOUS FILMS; ANODIC OXIDATION; FILM GROWTH; INTERFACES (MATERIALS); ION IMPLANTATION; TUNGSTEN;

METAL-FILM INTERFACE;

METALLIC FILMS;

EID: 0032494041     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/31/17/002     Document Type: Article

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