Tunneling into high temperature superconductors: Andreev bound states and broken time-reversal symmetry

Solid State Communications

Volumn 107, Issue 11, 1998, Pages 649-656

  Greene, L H ^a   Covington, M ^a,b   Aprili, M ^a,c   Paraoanu, E ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c 91405 Orsay Campus   (France)

Author keywords

A. high Tc superconductors; A. surfaces and interfaces; A. thin films; D. electronic transport; D. tunnelling

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; FILM GROWTH; INTERFACES (MATERIALS); MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; PHASE TRANSITIONS; SURFACE STRUCTURE; THIN FILMS; YTTRIUM BARIUM COPPER OXIDES;

ANDREEV BOUND STATES; BROKEN TIME REVERSAL SYMMETRY; PLANAR TUNNELING; TUNNELING CONDUCTANCE; ZERO BIAS CONDUCTANCE PEAK;

HIGH TEMPERATURE SUPERCONDUCTORS;

EID: 0032493541     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00212-9     Document Type: Article

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