Thermally stimulated characterization of shallow traps in the SiC/Si heterojunction

Journal of Physics D: Applied Physics

Volumn 31, Issue 13, 1998, Pages 1499-1503

  Lysenko, V S ^a   Tyagulski, I P ^a   Gomeniuk, Y V ^a   Osiyuk, I N ^a   Tkach, I I ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC CURRENTS; ELECTRONS; INTERFACES (MATERIALS); PHASE TRANSITIONS; SEMICONDUCTING SILICON; SILICON CARBIDE; THERMOANALYSIS;

SHALLOW TRAPS; THERMALLY STIMULATED CHARGE RELEASE (TSCR) TECHNIQUES;

HETEROJUNCTIONS;

EID: 0032493213     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/31/13/001     Document Type: Article

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