Electrolyte transistors: Ionic reaction - Diffusion systems with amplifying properties

Journal of Physical Chemistry A

Volumn 102, Issue 32, 1998, Pages 6491-6497

  Hegedus, László ^a   Kirschner, Norbert ^a   Wittmann, Mária ^a   Noszticzius, Zoltán ^a  

^a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTIONS; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRIC CURRENTS; HYDROGELS; ION EXCHANGE MEMBRANES; IONS; SEMICONDUCTOR MATERIALS;

ACID BASE ACID TRANSISTOR; ACID BASE REACTION; AMPLIFYING PROPERTY; ELECTROLYTE DIODE; ELECTROLYTE TRANSISTOR; IONIC REACTION DIFFUSION SYSTEM; POLARIZATION CURVE;

TRANSISTORS;

EID: 0032490779     PISSN: 10895639     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp981488h     Document Type: Article

References (51)

1. Dynamism and Regulation in Nonlinear Chemical Systems (Physica D84); Marek, M. A., Müller, S. C., Yamaguchi, T., Yoshikawa, K. Eds.; North-Holland: Amsterdam, 1995.
2. Nicolis, G.; Prigogine, I. Exploring Complexity; Freeman: New York, 1989.
3. Bar-Yam, Y. Dynamics of Complex Systems; Addison-Wesley: New York, 1997.
4. Zhabotinsky, A. M. Biofizika 1964, 9, 306.
5. Field, R. J., Kõrös, E.; Noyes, R. M. J. Am. Chem. Soc. 1974, 94, 8649.
6. Field, R. J., Burger, M., Eds. Oscillations and Traveling Waves in Chemical Systems; Wiley: New York, 1985.
7. Scott, S. K. Oscillations, Waves, and Chaos in Chemical Kinetics; Oxford University Press: Oxford, 1994.
8. Zaikin, A. N.; Zhabotinsky, A. M. Nature 1970, 225, 535.
9. Winfree, A. T. Sci. Am. 1974, 230, 82.
10. De Kepper, P.; Boissonade, J. From Bistability to Sustained Oscillations in Homogeneous Chemical Systems in Flow Reactor Mode. In Oscillations and Traveling Waves in Chemical Systems; Field, R. J., Burger, M., Eds.; Wiley: New York, 1985; Chapter 7.
11. Epstein, I. R.; Orbán, M. Halogen-Based Oscillators in a Flow Reactor. Chapter 8.
12. Noszticzius, Z.; Horsthemke, W.; McCormick, W. D.; Swinney, H. L.; Tam, W. Y. Nature 1987, 329, 619.
13. Tam, W. Y.; Horsthemke, W.; Noszticzius, Z.; Swinney, H. L. J. Chem. Phys. 1988, 88, 3395.
14. Kshirsagar, G.; Noszticzius, Z.; McCormick, W. D.; Swinney, H. L. Physica D 1991, 49, 5.
15. Castets, V.; Dulos, E.; Boissonade, J.; De Kepper, P. Phys. Rev. Lett. 1990, 64, 2953.
16. Ouyang, Q.; Swinney, H. L. Nature 1991, 352, 610.
17. Kapral, R., Showalter, K., Eds. Chemical Waves and Patterns; Kluwer: Dordrecht, The Netherlands, 1995.
18. Johnson, B. R., Scott, S. K. Chem. Soc. Rev. 1996, 265.
19. Winston, D.; Arora, M.; Maselko, J.; Gáspár, V.; Showalter, K. Nature 1991, 351, 132.
20. Lázár, A.; Noszticzius, Z.; Försterling, H. D.; Nagy-Ungvárai, Zs. Physica D 1995, 84, 112.
21. Lázár, A.; Noszticzius, Z.; Farkas, H.; Försterling, H. D. Chaos 1995, 5, 443.
22. Steinbock, O.; Kettunen, P.; Showalter, K. Science 1995, 269, 1857.
23. Lázár, A.; Försterling, H. D.; Volford, A.; Noszticzius, Z. J. Chem. Soc., Faraday Trans. 1996, 92, 2903.
24. Lázár, A.; Försterling, H. D.; Farkas, H.; Simon, P.; Volford, A.; Noszticzius, Z. CHAOS 1997, 7, 731.
25. Marlovits, G.; Wittmann, M.; Noszticzius, Z.; Gáspár, V. J. Phys. Chem. 1995, 99, 5359.
26. Volford, A.; Wittmann, M.; Marlovits, G.; Noszticzius, Z.; Gáspár, V. J. Phys. Chem. B. 1997, 101, 3720.
27. Agladze, K.; Aliev, R. R.; Yamaguchi, T.; Yoshikawa, K. J. Phys. Chem. 1996, 100, 13895.
28. Steinbock, O.; Kettunen, P.; Showalter, K. J. Phys. Chem. 1996, 100, 18970.
29. Winfree, A. T. Chaos 1991, 1, 303.
30. Larter, R. Chem. Rev. 1990, 90, 355.
31. Kim, J. T.; Larter, R. J. Phys. Chem. 1991, 95, 7948.
32. Rábai, Gy.; Orbán, M.; Epstein, I. R. Acc. Chem. Res. 1990, 23, 258.
33. Rábai, Gy. J. Phys. Chem. A 1997, 106, 7085.
34. Rubinstein, I. Electro-Diffusion of Ions; SIAM Studies in Applied Mathematics 11: SIAM: Philadelphia, 1990.
35. Lovrecek, B.; Depsic, A.; Bockris, J. O'M. J. Phys. Chem. 1959, 63, 750.
36. Shockley, W. Electrons and Holes in Semiconductors; Van Nostrand: New York, 1950.
37. Sze, S. M. Semiconductor Devices. Physics and Technology, Wiley: New York, 1985.
38. 2 are constants determined by the boundary conditions. In a good transistor, where the width of the base is only 10% of the diffusion length, the calculated concentration profile is close to a straight line connecting the given boundary values.
39. 1/2 is the diffusion length of the hydrogen ions.
40. Strehlow, H.; Knoche, W. Fundamentals of Chemical Relaxation; Monographs in Modern Chemistry; Verlag Chemie: Weinheim, New York 1977.
41. Simon, G. P. Ion Exchange Training Manual; Van Nostrand Reinhold: New York 1991.
42. Hegedus, L.; Noszticzius, Z.; Papp, Á.; Schubert, A.; Wittmann, M. ACH-Models Chem. 1995, 132, 207.
43. Hegedus, L.; Wittmann, M.; Kirschner, N.; Noszticzius, Z. Prog. Colloid Polym. Sci. 1996, 102, 101.
44. White, H. M.; Kittlesen, G. P.; Wrighton, M. S. J. Am. Chem. Soc. 1984, 106, 5375.
45. Thackeray, J. W.; White, H. S.; Wrighton, M. S. J. Phys. Chem. 1985, 89, 5133.
46. Wrighton, M. S. Science, 1986, 231, 32.
47. According to the one-dimensional Nernst-Planck equations the current density of an ion is a sum of two terms j = j(Δc) + j(Δφ) where the first term is due to the diffusion generated by the concentration gradients or differences |j(Δc)| = Ddc/dx ≈ DΔc/Δx and the second term is due to the ionic migration caused by the electric potential gradients |j(Δφ)| = Dc·zF/RTdφ/dx ≈ Dc·1/25.6 mV Δφ/Δx Assuming that the concentration difference and the concentration are closes we can approximate the ratio of the two terms as |j(Δc)|/|j(Δφ)| ≈ 25.6 mV/Δφ From this result, we can see that if Δφ = 0.1 V the contribution of diffusion to the total ionic current is around 20% only and for higher voltages it can be negligible.
48. The approximation holds only when the concentrations of the hydroxyl and any other anions in the depletion zone are negligible compared with that of the contaminating chloride ions there.
49. Petrov, V.; Ouyang, Q.; Swinney, H. L. Nature 1997, 388, 655.
50. Walgraef, D. Spatio-Temporal Pattern Formation; Springer: New York, 1997.
51. Cooper, G. M. The Cell; ASM Press & Oxford University Press: Oxford, 1997.