The band lineups at highly strained ZnS/CdS and ZnSe/ZnTe interfaces: Effects of the quadratic deformation potentials and the relaxation of the semicore d-electrons

Journal of Physics Condensed Matter

Volumn 10, Issue 39, 1998, Pages 8703-8714

  Said, R ^a   Qteish, A ^b   Meskini, N ^a  

^a Departement de Physique   (Tunisia)

^b YARMOUK UNIVERSITY   (Jordan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); PLASTIC DEFORMATION; RELAXATION PROCESSES; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; STRAIN RATE;

BAND LINEUPS; CONDUCTION BAND; QUADRATIC DEFORMATION; SEMICORE D-ELECTRONS;

BAND STRUCTURE;

EID: 0032487184     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/10/39/009     Document Type: Article

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