Unusual Strong-Coupling Effects in the Tunneling Spectroscopy of Optimally Doped and Overdoped Bi2Sr2CaCu2O8+δ

Physical Review Letters

Volumn 80, Issue 1, 1998, Pages 153-156

  Dewilde, Y ^a   Miyakawa, N ^a,b   Guptasarma, P ^a   Iavarone, M ^a   Ozyuzer, L ^a,c   Zasadzinski, J F ^a,c   Romano, P ^a   Hinks, D G ^a   Kendziora, C ^d   Crabtree, G W ^a   Gray, K E ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c ILLINOIS INSTITUTE OF TECHNOLOGY   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; ENERGY GAP; HIGH TEMPERATURE SUPERCONDUCTORS; JOSEPHSON JUNCTION DEVICES; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS; SPECTROSCOPY; TUNNEL JUNCTIONS;

OVERDOPING; POINT CONTACT TUNNELING; SCANNING TUNNELING SPECTROSCOPY; SUPERCONDUCTING GAP;

OXIDE SUPERCONDUCTORS;

EID: 0032484467     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.80.153     Document Type: Article

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