X-ray photoelectron spectroscopy study of excimer laser treated alumina films

Applied Physics Letters

Volumn 72, Issue 1, 1998, Pages 31-33

  Georgiev, D G ^a   Kolev, K ^a   Laude, L D ^a   Mednikarov, B ^b   Starbov, N ^b  

^a UNIVERSITY OF MONS   (Belgium)

^b CENTRAL LABORATORY OF PHOTOPROCESSES   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CRYSTAL STRUCTURE; EXCIMER LASERS; FILM PREPARATION; LASER BEAMS; NUMERICAL METHODS; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SPECTROMETERS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON BEAM EVAPORATION; ELECTRON GUN EVAPORATION; EXCIMER LASER IRRADIATION; LOW INCIDENCE ANGLE X RAY DIFFRACTION;

THIN FILMS;

EID: 0032484442     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120636     Document Type: Article

References (10)

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