Experimental and numerical analysis of rapid reaction to initiate the radical chain reactions in WSix CVD

Thin Solid Films

Volumn 320, Issue 1, 1998, Pages 151-158

  Chae, Y K ^a   Egashira, Y ^a   Shimogaki, Y ^a   Sugawara, K ^b   Komiyama, H ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NIHON UNIVERSITY   (Japan)

Author keywords

Chemical vapor deposition; Gas phase reaction rate constant; Radical chain reaction; Tubular reactor method; WSix

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; NUMERICAL ANALYSIS; SILANES; TUNGSTEN COMPOUNDS;

GAS PHASE REACTION RATE CONSTANT; RADICAL CHAIN REACTION; TUBULAR REACTOR METHOD; TUNGSTEN HEXAFLUORIDE; TUNGSTEN SILICIDE;

FILM GROWTH;

EID: 0032482042     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)01080-8     Document Type: Article

References (7)

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