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Volumn 332, Issue 1-2, 1998, Pages 319-324

A low temperature integrated aluminum metallization technology for ULSI devices

Author keywords

Aluminum; Chemical vapor deposition process; Integration; Metallization

Indexed keywords

ALUMINUM; ASPECT RATIO; ELECTRIC PROPERTIES; ELECTROMIGRATION; LOW TEMPERATURE PROPERTIES; METALLIZING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; THIN FILMS; ULSI CIRCUITS; VACUUM APPLICATIONS;

EID: 0032476315     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01032-3     Document Type: Article
Times cited : (5)

References (14)
  • 4
    • 84936699484 scopus 로고
    • Submicrometer Metallization
    • D.B. Knorr, K.P. Rodbell, SPIE, Vol. 1805, Submicrometer Metallization, 1992, p. 210.
    • (1992) SPIE , vol.1805 , pp. 210
    • Knorr, D.B.1    Rodbell, K.P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.