|
Volumn 332, Issue 1-2, 1998, Pages 319-324
|
A low temperature integrated aluminum metallization technology for ULSI devices
|
Author keywords
Aluminum; Chemical vapor deposition process; Integration; Metallization
|
Indexed keywords
ALUMINUM;
ASPECT RATIO;
ELECTRIC PROPERTIES;
ELECTROMIGRATION;
LOW TEMPERATURE PROPERTIES;
METALLIZING;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SEMICONDUCTING FILMS;
SEMICONDUCTOR DEVICE MANUFACTURE;
THIN FILMS;
ULSI CIRCUITS;
VACUUM APPLICATIONS;
INTEGRATED ALUMINUM METALLIZATION PROCESS;
METALLIC FILMS;
|
EID: 0032476315
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(98)01032-3 Document Type: Article |
Times cited : (5)
|
References (14)
|