The effects of the process parameters on the electrical and microstructure characteristics of the CrSi thin resistor films: Part I

Thin Solid Films

Volumn 332, Issue 1-2, 1998, Pages 418-422

  Wu, Fan ^a   McLaurin, Allen W ^a   Henson, Kirk E ^a   Managhan, Doug G ^a   Thomasson, Samuel L ^a  

^a MEDTRONIC INC   (United States)

Author keywords

Cermet films; Sputtering; Temperature coefficient of resistance; Thin resistor films

Indexed keywords

ANNEALING; CERMETS; ELECTRIC RESISTANCE; PARTIAL PRESSURE; PRESSURE EFFECTS; RESISTORS; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS; THIN FILM DEVICES; TRANSMISSION ELECTRON MICROSCOPY;

THIN RESISTOR FILMS;

METALLIC FILMS;

EID: 0032476254     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01042-6     Document Type: Article

References (6)

1. S. Wolf, Silicon Processing for the VLSI, Vol. 2, Lattice Press, Sunset Beach, 1990.
2. N. Schwartz, R.W. Berry, Thin Film Components and Circuits, in The Physics of Thin Films, Vol. 2 p. (1964) 363.
3. L. Maissel, in: L. Maissel, R. Glang (Eds.), Handbook of Thin Film Technology, McGraw-Hill, New York, 1970, p. 18.
4. R. Glang, R.A. Holmwood, S.R. Herd, J. Vacuum Sci. Technol. 4 (1967) 163.
5. C.A. Neugebauer, M.B. Webb, J. Appl. Phys. 33 (1962) 72.
6. F. Wu, J.E. Morris, Thin Solid Films 246 (1994) 17.