Growth and wetting angles as the control parameters of crystal shape in Czochralski method

Journal of Crystal Growth

Volumn 193, Issue 4, 1998, Pages 720-727

  Bakovets, V V ^a  

^a NIKOLAEV INSTITUTE OF INORGANIC CHEMISTRY   (Russian Federation)

Author keywords

Czochralski method; Germanium crystal; Growth angle; Silicon crystal; Wetting angle

Indexed keywords

ANISOTROPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; WETTING;

CRYSTAL SHAPE; WETTING ANGLE;

CRYSTAL GROWTH FROM MELT;

EID: 0032475670     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00499-0     Document Type: Article

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