Thermal chemical vapor deposition of copper from hexafluoroacetylacetonate Cu(I) vinyltrimethylsilane: Kinetic studies

Journal of Crystal Growth

Volumn 193, Issue 1-2, 1998, Pages 133-147

  Naik, Mehul B ^a,c   Lakshmanan, Satish K ^a   Wentorf, R H ^a   Reeves, Robert R ^b   Gill, William N ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Research Rensselaer Polytechnic Institute   (United States)

^c APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COPPER; COPPER COMPOUNDS; ELECTRIC RESISTANCE; FILM GROWTH; HELIUM; HYDROGEN; REACTION KINETICS; THERMAL EFFECTS; THICK FILMS;

FILM RESISTIVITY; HEXAFLUOROACETYLACETONE COPPER I VINYLTRIMETHYLSILANE; THERMAL CHEMICAL VAPOR DEPOSITION;

CHEMICAL VAPOR DEPOSITION;

EID: 0032475286     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00452-7     Document Type: Article

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