Atmospheric pressure MOCVD growth of crystalline InP in opals

Journal of Crystal Growth

Volumn 193, Issue 1-2, 1998, Pages 9-15

  Yates, H M ^a   Pemble, M E ^a   Miguez H ^b,c   Blanco, A ^b,c   Lopez C ^b,c   Meseguer, F ^b,c   Vazquez L ^b,c  

^a UNIVERSITY OF SALFORD   (United Kingdom)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^c UNIVERSITAT POLITÈCNICA DE VALÈNCIA   (Spain)

Author keywords

Bragg diffraction; Indium phosphide; MOCVD; Photonic

Indexed keywords

ATMOSPHERIC PRESSURE; ATOMIC FORCE MICROSCOPY; ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; REFRACTIVE INDEX; SEMICONDUCTING INDIUM PHOSPHIDE; X RAY DIFFRACTION;

BRAGG DIFFRACTION; PHOTONICS; SEMICONDUCTOR LOADING; SYNTHETIC OPAL; VOID;

SEMICONDUCTOR GROWTH;

EID: 0032475217     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00478-3     Document Type: Article

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