Structural analysis of buried conducting CoSi2 layers formed in Si by high-dose Co ion implantation

Journal of Crystal Growth

Volumn 187, Issue 3-4, 1998, Pages 435-443

  Galayev, A A ^a   Parkhomenko, Yu N ^b   Chtcherbatchev, K D ^b   Podgorny, D A ^b   Belogorohov, A I ^a   Dieguez A ^c   Romano Rodriguez, A ^c   Perez Rodriguez A ^c   Morante, J R ^c  

^a Inst Chem Prob in Microlectron   (Russian Federation)

^b NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY MISIS   (Russian Federation)

^c UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; RAMAN SCATTERING; SECONDARY ION MASS SPECTROMETRY; SILICON COMPOUNDS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ION IMPLANTATION;

EID: 0032474134     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00600-3     Document Type: Article

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