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Journal of Crystal Growth

Volumn 187, Issue 1, 1998, Pages 72-80

Effects of microgravity on Hg1-xCdxTe/(1 0 0)CdTe epitaxy by CVT under transient growth conditions

(3) Wiedemeier, H a Ge, Y R a Hutchins, M A a,b

a Rensselaer Polytechnic Institute (United States)

b Lockheed Martin IR Imaging Systems (United States)

Author keywords

CVT; Epitaxy; Hg1 xCdxTe; Microgravity; Transient conditions

Indexed keywords

CHARGE CARRIERS; COMPOSITION EFFECTS; DEPOSITION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GRAVITATIONAL EFFECTS; HEAT CONVECTION; MICROGRAVITY PROCESSING; PHASE INTERFACES; SEMICONDUCTOR GROWTH; SUBSTRATES;

CARRIER MOBILITY; CHEMICAL VAPOR TRANSPORT (CVT); MERCURY CADMIUM TELLURIDE;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0032473731 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00834-8 Document Type: Article

Times cited : (6)

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