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Volumn 187, Issue 1, 1998, Pages 35-41

MOVPE growth of InGaAsP/InP-based vertical-cavity structures for wafer-fused VCSELs

Author keywords

DBR; InGaAsP; MOCVD; MOVPE; VCSEL

Indexed keywords

CAVITY RESONATORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

EID: 0032473723     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00841-5     Document Type: Article
Times cited : (4)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.