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Volumn 187, Issue 1, 1998, Pages 35-41
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MOVPE growth of InGaAsP/InP-based vertical-cavity structures for wafer-fused VCSELs
a
NTT CORPORATION
(Japan)
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Author keywords
DBR; InGaAsP; MOCVD; MOVPE; VCSEL
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Indexed keywords
CAVITY RESONATORS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
METALLORGANIC VAPOR PHASE EPITAXY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WELLS;
DISTRIBUTED BRAGG REFLECTORS (DBR);
VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);
SEMICONDUCTOR LASERS;
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EID: 0032473723
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(97)00841-5 Document Type: Article |
Times cited : (4)
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References (13)
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