Bandgap tuning of visible laser material

Electronics Letters

Volumn 34, Issue 7, 1998, Pages 665-666

  Hamilton, C J ^a   Kowalski, O P ^a   McIlvaney, K ^a   Bryce, A C ^a   Marsh, J H ^a   Button, C C ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; ENERGY GAP; LASER TUNING; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

OXIDE STRIPE LASERS;

SEMICONDUCTOR LASERS;

EID: 0032473655     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980434     Document Type: Article

References (5)

1. MARSH, J.H.: 'Quantum well intermixing', Semiconductor Sci. Technol., 1993, 8, pp. 1136-1155
2. 1-yP heterostructures', Appl. Phys. Lett., 1988, 52, (17), pp. 1413-1415
3. ITAYA, K., ISHIKAWA, M., HATAKOSHI, G.-I., and UEMATSU, Y.: 'NeW window-structure InGaAlP visible light laser diodes by self-selective Zn diffusion-induced disordering', IEEE J. Quantum Electron., 1991, QE-27, (6), pp. 1496-1500
4. KOWALSKI, O.P., HAMILTON, C.J., MCDOUGAL, S., MARSH, J.H., BRYCE, A.C., DE LA RUE, R.M., VÖGELE, B., SANLEY, C.R., BUTTON, C.C., and ROBERTS, J.S.: 'A universal technique for quantum well intermixing', to be published in Appl. Phys. Lett. 1998, 72, (5), pp. 581-583
5. OU, S.S., YANG, J.J., JANSEN, M., HESS, C., HAYASHIDA, P., TU, C., and ALVAREZ, F.: 'High power reliable 645 nm compressively strained GaInP/GaAlInP laser diodes', Electron. Lett., 1994, 30, (16), pp. 1303-1305