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Journal of Crystal Growth

Volumn 186, Issue 3, 1998, Pages 315-321

Substrate temperature effects on the growth of In1-x-yGaxAlyAs on InP substrates by molecular beam epitaxy

(5) Yoon, S F a Zhang, P H a Zheng, H Q a Radhakrishnan, K a Swaminathan, S a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

Compound semiconductors; Molecular beam epitaxy

Indexed keywords

CRYSTAL LATTICES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY;

ENERGY DISPERSIVE X RAY SPECTROSCOPY; LATTICE MISMATCH;

MOLECULAR BEAM EPITAXY;

EID: 0032473195 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00490-9 Document Type: Article

Times cited : (5)

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