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Volumn 135, Issue 1-4, 1998, Pages 366-371
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Surface-recoil processes of hydrogen on Si (1 0 0)-2 × 1:H and Si (1 0 0)-1 times; 1:2H surfaces studied by low-energy He ion beams
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Author keywords
Hydrogen; Ion scattering; Silicon surface; Surface analysis; Surface recoiling
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Indexed keywords
COMPUTER SIMULATION;
GAS ADSORPTION;
HELIUM;
HYDROGEN BONDS;
ION BEAMS;
SILICON;
SURFACE STRUCTURE;
ION SCATTERING;
SURFACE RECOILING;
HYDROGEN;
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EID: 0032472754
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-583X(97)00610-1 Document Type: Article |
Times cited : (2)
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References (11)
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