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Volumn 135, Issue 1-4, 1998, Pages 366-371

Surface-recoil processes of hydrogen on Si (1 0 0)-2 × 1:H and Si (1 0 0)-1 times; 1:2H surfaces studied by low-energy He ion beams

Author keywords

Hydrogen; Ion scattering; Silicon surface; Surface analysis; Surface recoiling

Indexed keywords

COMPUTER SIMULATION; GAS ADSORPTION; HELIUM; HYDROGEN BONDS; ION BEAMS; SILICON; SURFACE STRUCTURE;

EID: 0032472754     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00610-1     Document Type: Article
Times cited : (2)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.