Electron scattering due to fluctuating localized spins in degenerate ferromagnetic semiconductors

Journal of Magnetism and Magnetic Materials

Volumn 182, Issue 3, 1998, Pages 329-334

  Takahashi, Masao ^a   Mitsui, Kazuhiro ^a  

^a KANAGAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Double exchange interaction; Electrical resistivity; Magnetic semiconductor; Magnetoresistance; s f model

Indexed keywords

APPROXIMATION THEORY; COMPUTATIONAL METHODS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON SCATTERING; ELECTRONIC DENSITY OF STATES; FERROMAGNETIC MATERIALS; HIGH TEMPERATURE EFFECTS; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MATHEMATICAL MODELS;

BORN APPROXIMATION; DOUBLE EXCHANGE INTERACTION; MAGNETIC SEMICONDUCTORS;

MAGNETIC SEMICONDUCTORS;

EID: 0032472726     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(97)01030-5     Document Type: Article

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