Heavy ion induced single event effects in semiconductor device

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 135, Issue 1-4, 1998, Pages 239-243

  Liu, Jie ^a   Ma, Feng ^a   Hou, Mingdong ^a   Sun, Youmei ^a   Quan, Jinming ^a   Zhou, Yanpin ^b   Zhong, Yujin ^b   Fan, Jinde ^b   Chen, Zhaoyun ^b   Feng, Fuyin ^b  

^a INSTITUTE OF MODERN PHYSICS   (China)

^b NONE

Author keywords

Heavy ion bombardment; Large scale integrate circuit; Single event effect

Indexed keywords

ARGON; INTEGRATED CIRCUIT TESTING; LSI CIRCUITS; PROM; RANDOM ACCESS STORAGE;

SINGLE EVENT EFFECTS (SEE); SYNCHRONOUS RANDOM ACCESS MEMORY (SRAM);

ION BOMBARDMENT;

EID: 0032472712     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00598-3     Document Type: Article

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