Electrical conduction in zinc oxide semiconducting polycrystalline electrodes. Importance of grain boundary;Conduction electrique dans les electrodes polycristallines de ZnO semiconducteur. Importance des joints de grains

Journal de Chimie Physique et de Physico-Chimie Biologique

Volumn 95, Issue 3, 1998, Pages 595-616

  Djembo Taty, K ^a   Plaindoux, L ^a   Kossanyi, J ^a   Ronfard Haret, J C ^a  

^a CNRS   (France)

Author keywords

Electrical conduction; Grain boundaries; Polycrystalline semiconducting electrodes; Varistors; Zinc oxide

Indexed keywords

BISMUTH; ZINC OXIDE;

ARTICLE; CHEMICAL INTERACTION; ELECTRIC CONDUCTIVITY; ELECTROCHEMICAL ANALYSIS; ELECTRODE; SEMICONDUCTOR;

EID: 0032449792     PISSN: 00217689     EISSN: None     Source Type: Journal    
DOI: 10.1051/jcp:1998171     Document Type: Article

References (22)

1. K. Eda (1989) IEEE Electrical Ins. Mag. 5, 6, 28-41.
2. T. Gupta (1990) J. Am. Ceram. Soc. 73, 7, 1817-1840.
3. L. M. Levinson et H. R. Philipp (1986) Ceram. Bull. 65, 4, 639-646.
4. S. R. Morrison (1980) Electrochemistry at Semiconductor and Oxidized Metal Electrodes. Plenum Press, New York.
5. G. Hodes, S. J. Fonash, A. Heller et B. Miller (1985) Adv. Electrochem. Electrochem. Eng. 13, 113-158.
6. D. Fichou, J. Pouliquen, J. Kossanyi, M. Jakani, G. Campet et J. Claverie (1985) J. Electroanal. Chem. 188, 167-187.
7. D. Fichou et J. Kossanyi (1985) J. Electrochem. Soc. 133, 8, 1607-1617.
8. J. Gautron, P. Lemasson et J. F. Marucco (1980) Faraday Discussions of the Chemical Society 70, 81-91.
9. H. Morisaki et K. Yazawa, (1978) Appl. Phys. Lett. 33, 12,1013-1015 .
10. E. Vrachnou, N. Vlachopoulos et M. Graetzel (1987) J. Chem. Soc., Chem. Commun., 868-870.
11. B. Pettinger, H. R. Schoeppel, T. Yokoyama et H. Gerischer (1974) Ber. Bunsenges. Phys. Chem. 78, 10, 1025-1030.
12. R. Williams et A. Willis (1968) J. Appl. Phys. 39, 8, 3731-3736.
13. D. Kouyate, J. C. Ronfard-Haret et J. Kossanyi (1991) J. Electroanal. Chem. 319, 145-160.
14. G. E. Pike et C. H. Seager (1979) J. Appl. Phys., 50, 5, 3414-3422.
15. F. Greuter et G. Blatter (1990) Semicond. Sci. Technol., 5, 111-137.
16. B Bhushan, S. C. Kashyap et K. L. Chopra (1981) J. Appl. Phys., 52, 4, 2932-2936.
17. S. N. Bai et T. Y. Tseng (1993) J. Appl. Phys., 74, 1, 695-703.
18. W. Schmickler (1978) Ber. Bunsenges. Phys. Chem., 82, 477-487.
19. F. Koch (1980) Surf. Sci., 98, 571-588.
20. P. R. Emtage (1977) J. Appl. Phys., 48, 10, 4372-4384.
21. G. H. Schoenmakers, D. Vanmaekelbergh et J. J. Kelly (1996) J. Phys. Chem., 100, 8, 3215-3220.
22. M. Anpo et Y Kubokawa (1984) J. Phys. Chem., 88, 23, 5557-5560.