Attributes and drawbacks of submicron CMOS for IR FPA readouts

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3360, Issue , 1998, Pages 91-100

  Kozlowski, Lester J ^a  

^a ROCKWELL SCIENCE CENTER   (United States)

Author keywords

CCD; CMOS; Focal plane array; HgCdTe; Infrared

Indexed keywords

CAMERAS; CHARGE COUPLED DEVICES; CMOS INTEGRATED CIRCUITS; ELECTRONICS PACKAGING; FLIP CHIP DEVICES; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED OPTOELECTRONICS; LITHOGRAPHY; MERCURY COMPOUNDS; MOSFET DEVICES; OPTICAL SENSORS; SEMICONDUCTING INDIUM COMPOUNDS;

FOCAL PLANE ARRAY; INFRARED CAMERAS; INFRARED SENSORS; MERCURY CADMIUM TELLURIDE;

INFRARED DETECTORS;

EID: 0032403324     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Recent advances in staring hybrid focal plane arrays: Comparison of HgCdTe, InGaAs, and GaAs/AlGaAs detector technologies
2. 3.2 μm PACE-I HgCdTe 1024×1024 FPA
3. Low noise capacitive transimpedance amplifier performance vs. alternative IR detector interface schemes in submicron CMOS
4. 2 FPA for infrared astronomy: Development status
5. Electronically scanned buffered direct injection circuit for staring IR focal plane array
6. Adaptive 128×128 IR camera
7. Hot-electron-induced photon and photocarrier generation in silicon MOSFET's