Characterization of a color sensitive photo-detector implemented in a BiCMOS technology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3300, Issue , 1998, Pages 198-206

  Ben Chouikha, Mohamed ^a   Viénot, Françoise ^a   Lu, G N ^a  

^a SORBONNE UNIVERSITÉ   (France)

Author keywords

Color detector; Colorimetry; Device color space; Semiconductor devices

Indexed keywords

CMOS INTEGRATED CIRCUITS; COLORIMETRY; OPTICAL FILTERS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS;

COLOR DETECTORS;

PHOTODETECTORS;

EID: 0032400678     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.298281     Document Type: Conference Paper

References (5)

1. Buried Triple p-n junction structure in a BiCMOS Technology for color detection
2. Colour detection using a buried double p-n junction structure implemented in the CMOS process
3. Using buried double p-n junction implemented in a CMOS process for wavelength determination
4. Color sensitive photodetectors in standard CMOS and BiCMOS technologies
5. Methods for characterizing colour scanners and digital cameras