Study of image formation properties of As40S20Se40 thin layers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3294, Issue , 1998, Pages 176-179

  Stronski, A ^a   Vlcek M ^a   Sklenar A ^a   Shepeljavi, P E ^a   Oleksenko, P F ^a   Wagner, T ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

As40S20Se40 layers; Optical properties; Raman spectra; Surface relief formation

Indexed keywords

ANNEALING; ARSENIC COMPOUNDS; DIFFRACTION GRATINGS; ETCHING; HOLOGRAPHY; LIGHT TRANSMISSION; OPTICAL PROPERTIES; RAMAN SCATTERING; REFRACTIVE INDEX; THIN FILMS;

SURFACE RELIEF FORMATION;

IMAGE PROCESSING;

EID: 0032400574     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.304529     Document Type: Conference Paper

References (7)

1. Recording of holographic optical elements on As-S-Se layers
2. Holographic optical element fabrication using chalcogenide layers
3. Optical and mechanical properties of IR-transmitting chalcogenide glass fibers
4. Optical properties and photoinduced changes in amorphous As-S films
5. Refractive - Index behaviour of amorphous semiconductors and glasses
6. New analytic method for investigation of the distribution of bonds in As-S system
7. Fabrication of periodical structures with the help of chalcogenide inorganic resists