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Volumn 32, Issue 4 SUPPL., 1998, Pages

Structure and electrical properties of Ba1-xSrxTiO3 (BST) thin films fabricated by sol-gel method

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0032396752     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (2)

References (9)
  • 9
    • 0012537372 scopus 로고
    • eds. G. Barvotlin and A. Vapaille North-Holland, Chap. 5
    • Hesto, Instabilities in Silicon Devices, eds. G. Barvotlin and A. Vapaille (North-Holland, 1986), Vol. 1, Chap. 5, p. 263.
    • (1986) Instabilities in Silicon Devices , vol.1 , pp. 263
    • Hesto1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.