Mott transitions in heavily doped magnetic semiconductors

Physics of the Solid State

Volumn 40, Issue 3, 1998, Pages 396-400

  Nagaev, E L ^a  

^a INSTITUTE FOR HIGH PRESSURE PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032395397     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1130331     Document Type: Article

References (15)

1. M. Oliver et al., Phys. Rev. Lett. 24, 1064 (1970); T. Penny et al., Phys. Rev. B 5, 3669 (1972); Y. Shapira et al., Phys. Rev. B 8, 2299 (1973).
2. M. Oliver et al., Phys. Rev. Lett. 24, 1064 (1970); T. Penny et al., Phys. Rev. B 5, 3669 (1972); Y. Shapira et al., Phys. Rev. B 8, 2299 (1973).
3. M. Oliver et al., Phys. Rev. Lett. 24, 1064 (1970); T. Penny et al., Phys. Rev. B 5, 3669 (1972); Y. Shapira et al., Phys. Rev. B 8, 2299 (1973).
4. É. L. Nagaev, Usp. Fiz. Nauk 166, 833 (1996).
5. É. L. Nagaev, The Physics of Magnetic Semiconductors, Mir, Moscow (1983); Nauka, Moscow (1979) [in Russian].
6. Yu. P. Irkhin, Fiz. Met. Metalloved. 6, 214, 586 (1958).
7. É. L. Nagaev, Zh. Éksp. Teor. Fiz. 54, 228 (1968) [Sov. Phys. JETP 27, 122 (1968)].
8. É. L. Nagaev, Zh. Éksp. Teor. Fiz. 54, 228 (1968) [Sov. Phys. JETP 27, 122 (1968)].
9. A. Janase and T. Kasuya, J. Phys. Soc. Jpn. 25, 1025 (1968).
10. N. Molt and E. Davis, Electronic Processes in Noncrystalline Materials, Oxford (1971).
11. É. L. Nagaev, Zh. Éksp. Teor. Fiz. 90, 652 (1986) [Sov. Phys. JETP 63, 379 (1986)]; ibid. 65, 322 (1986); ibid. 92, 569 (1987).
12. É. L. Nagaev, Zh. Éksp. Teor. Fiz. 90, 652 (1986) [Sov. Phys. JETP 63, 379 (1986)]; ibid. 65, 322 (1986); ibid. 92, 569 (1987).
13. É. L. Nagaev, Zh. Éksp. Teor. Fiz. 90, 652 (1986) [Sov. Phys. JETP 63, 379 (1986)]; ibid. 65, 322 (1986); ibid. 92, 569 (1987).
14. É. L. Nagaev, Zh. Éksp. Teor. Fiz. 90, 652 (1986) [Sov. Phys. JETP 63, 379 (1986)]; ibid. 65, 322 (1986); ibid. 92, 569 (1987).
15. T. Saitoh et al., Phys. Rev. B 51, 13942 (1995).