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Volumn 5, Issue 3, 1998, Pages 1029-1031

An ultrahigh-vacuum goniometer for in situ soft X-ray standing-wave analysis of semiconductor surfaces

Author keywords

Goniometers; Photoelectron spectroscopy; Semiconductor surfaces; X ray absorption near edge structure (XANES); X ray standing waves

Indexed keywords


EID: 0032384380     PISSN: 09090495     EISSN: None     Source Type: Journal    
DOI: 10.1107/S0909049597015549     Document Type: Article
Times cited : (1)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.