Effect of hydrogen termination on migration of Si adatoms on Si(001) surfaces

Journal of the Korean Physical Society

Volumn 33, Issue SUPPL. 1, 1998, Pages

  Ohno, Takahisa ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032374794     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

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