Statistical model explaining the fine structure and interface preference of localized excitons in type-II GaAs/AlAs superlattices

Journal of Nonlinear Optical Physics and Materials

Volumn 7, Issue 1, 1998, Pages 13-35

  Belousov, M V ^a   Chernyshov, A Yu ^a   Ignatev, I V ^a   Kozin, I E ^a   Kavokin, A V ^b   Gibbs, H M ^c   Khitrova, G ^c  

^a ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ARSENIDE; ATOMIC PHYSICS; EXCITONS; GALLIUM ARSENIDE; INTERFACE STATES; MONOLAYERS; SEMICONDUCTING GALLIUM;

DENSITIES OF STATE; DIFFERENTIAL REFLECTION; EXCITON BOHR RADIUS; GAAS/ALAS SUPERLATTICE; INTERFACE QUALITY; LOCALIZED EXCITON; LOWEST ENERGY STATE; STATISTICAL MODELING;

III-V SEMICONDUCTORS;

EID: 0032371975     PISSN: 02188635     EISSN: None     Source Type: Journal    
DOI: 10.1142/s021886359800003x     Document Type: Article

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