First-principles study of the As-mediated growths of Si and Ge on Si(100)

Surface Review and Letters

Volumn 5, Issue 1, 1998, Pages 77-80

  Ko, Young Jo ^a   Chang, K J ^a   Yi, Jae Yel ^b   Park, Seong Ju ^c   Lee, El Hang ^d  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

^d Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032371303     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0218625X98000165     Document Type: Article

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