The DX center in GaAsP alloys

Physica Status Solidi (B) Basic Research

Volumn 209, Issue 2, 1998, Pages 363-374

  Ben Salem, M M ^a   Zaidi, M A ^a   Zazoui, M ^a,b   Bourgoin, J C ^a,c  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b HASSAN II UNIVERSITY OF CASABLANCA   (Morocco)

^c SORBONNE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032355478     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199810)209:2<363::AID-PSSB363>3.0.CO;2-P     Document Type: Article

References (30)

1. The Physics of DX Centers in GaAs Alloys, Chap. 14, Ed. J. C. BOURGOIN, Trans. Tech. Publ., Switzerland, 1990.
2. A. MAUGER and J. C. BOURGOIN, Phys. Rev. 46, 12278 (1992).
3. D. J. CHADI and K. J. CHANG, Phys. Rev. B 39, 10063 (1989).
4. J. KRYNICKI, M. A. ZAIDI, M. ZAZOUI, J. C. BOURGOIN, M. DIFORTE-POISSON, C. BRYLINSKI, S. L. DELAGE, and H. BLANCK, J. Appl. Phys. 74, 260 (1993).
5. E. CALLEJA, A. I. GOMEZ, and E. MUNOZ, Solid State Electronics 29, 83 (1986).
6. M. G. CRAWFORD, G. E. STILLMAN, J. A. ROSSI, and N. HOLONYAK, Phys. Rev. 168, 867 (1968).
7. R. A. CRAVEN and D. FINN, J. Appl. Phys. 50, 6334 (1979).
8. M. KANIEWSKA and J. KANIEWSKI, Solid State Commun. 53, 485 (1985).
9. P. KAMINSKI, Semicond. Sci. Technol. 8, 538 (1993).
10. V. SMID, J. KRISTOFIK, J. ZEMAS, and J. J. MARES, Semicond. Sci. Technol. 6, B150 (1991).
11. L. FORBES and R. M. FOGLE, Appl. Phys. Lett. 25, 152 (1974).
12. M. KANIEWSKA and J. KANIEWSKI, J. Appl. Phys. 63, 1086 (1988).
13. P. HUBIK, J. J. MARES, J. KRISTOFIK, V. SESTAKOVA, and B. STEPANEK, Semicond. Sci. Technol. 11, 989 (1996).
14. B. B. KOSICKI, W. PAUL, A. J. STRAUSS, and G. W. VELER, Phys. Rev. Lett. 17, 1175 (1966).
15. A. Y. VAL, L. V. GOBIBEV, L. V. SHARONAVA, and Y. V. SHMARTSEV, Soviet Phys. - Semicond. 4, 2017 (1971).
16. P. S. DUTTA, K. S. R. KOTESWARA RAO, K. S. SANGUNNI, H. L. BHAT, and V. KUMAR, Appl. Phys. Lett. 65, 1412 (1994).
17. A. BARALDI, F. COLONNA, G. COVUCCI, C. GHEZZI, R. MAGNANINI, A. PARISINI, L. TORRICOUX, A. BOSACCHI, and S. FRANCHI, Mater. Sci. Engng. B 44, 70 (1997).
18. Y. ZHU, Y. TAKEDA, and A. SASAKI, J. Appl. Phys. 64, 1897 (1988).
19. J. C. BOURGOIN and M. ZAZOUI, Phys. Rev. B 45, 11324 (1992).
20. M. ZAZOUI, V. DONTCHEV, and J. C. BOURGOIN, Phys. Rev. B 47, 4296 (1993).
21. D. J. CHADI and K. J. CHANG, Phys. Rev. Lett. 61, 873 (1988).
22. E. YAMAGUCHI, K. SHINAIZHI, and T. OHNO, J. Phys. Soc. Jpn. 60, 3093 (1991).
23. S. HUANT, S. P. NAJOLA, and B. ETIENNE, Phys. Rev. Lett. 65, 1546 (1990).
24. A. MANDRAY, S. HUANT, and B. ENTIENNE, Europhys. Lett. 20, 181 (1992).
25. S. HUANT, A. MAUDRAY, G. MARTINEZ, and B. ETIENNE, Mater. Sci. Forum 196/201, 395 (1995).
26. M. M. BEN SALEM, M. A. ZAIDI, H. MAAREF, and J. C. BOURGOIN, J. Appl. Phys. 78, 1004 (1995).
27. D. PONS, Appl. Phys. Lett. 37, 413 (1980).
28. J. CRIADO, A. GOMEZ, E. CALLEJA, and E. MUNOZ, Appl. Phys. Lett. 52, 660 (1988).
29. A. BRONIATOWSKI, A. BLOSSE, P. C. SRIVASTAVA, and J. C. BOURGOIN, J. Appl. Phys. 54, 2907 (1983).
30. J. C. BOURGOIN and A. MAUGER, Appl. Phys. Lett. 53, 749 (1988).