Synchrotron radiation induced SiC formation on Si substrate employing methanol and H radical

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 4, 1998, Pages 2252-2256

  Ikeda, M ^a   Inayoshi, M ^a   Hori, M ^a   Goto, T ^a   Hiramatsu, M ^b   Hiraya, A ^c  

^a NAGOYA UNIVERSITY   (Japan)

^b MEIJO UNIVERSITY   (Japan)

^c HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032352670     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581335     Document Type: Article

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