Population inversion of Landau levels in the valence band of silicon in crossed electric and magnetic fields

Physica Status Solidi (B) Basic Research

Volumn 205, Issue 2, 1998, Pages 575-585

  Muravjov, A V ^a,c   Strijbos, R C ^b   Wenckebach, W Th ^b   Shastin, V N ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032345246     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199802)205:2<575::AID-PSSB575>3.0.CO;2-A     Document Type: Article

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