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Volumn 15, Issue 2, 1998, Pages 652-660

Biexcitons and dark states in semiconductor microcavities

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EID: 0032341979     PISSN: 07403224     EISSN: None     Source Type: Journal    
DOI: 10.1364/JOSAB.15.000652     Document Type: Article
Times cited : (30)

References (39)
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    • note
    • For polarization along the growth direction, the fundamental mode of the cavity has the same dispersion as a free photon, and a situation similar to that of Ref. 7 would result.
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    • 14). For the sake of simplicity we have avoided their introduction, which does not alter any of the physically significant effect.
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    • This may lead to an additional luminescence band between the Raby split lines [eee also the discussion in R. Houdre, R. P. Stanley, and M. Ilegems, Phys. Rev. A 53, 2711 (1996)]. A dark state partially activated by mixing with an optically active one may also be responsible for the so called weak-coupling component observed in resonant Raman scattering [A. Fainstein, B. Jusserand, and V. Thierry-Mieg, Phys. Rev. Lett. 78, 1576 (1997)].
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    • Short-wavelength phonons as well as interface and confined-phonon modes associated with the multiple-quantum-well structure may lead to a partial mixing of the b states because they are coupled to excitons in different wells.
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    • to be published
    • A discussion of this issue, also in relation to the motional narrowing considered in D. M. Whittaker, P. Kinsler, T. A. Fisher, M. S. Skolnick, A. Armitage, A. M. Afshar, M. D. Sturge, and J. S. Roberts, Phys. Rev. Lett. 77, 4792 (1996), will be given elsewhere [V. M. Agranovich, G. C. La Rocca, and F. Bassani, Phys. Rev. Lett. (to be published)].
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    • It would be interesting to calculate the biexciton properties in the presence of the cavity along the lines followed in Ref. 7 for a free quantum well.
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