Characteristic losses in metals: Al, Be, and Ni

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 4, 1998, Pages 2595-2603

  Madden, H H ^a   Landers, R ^a   Kleiman, G G ^a   Zehner, D M ^b  

^a UNIVERSITY OF CAMPINAS   (Brazil)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032337535     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581388     Document Type: Article

References (57)

1. D. Pines, Rev. Mod. Phys. 28, 184 (1956).
2. H. Raether, Springer Tracts in Modern Physics (Springer, Berlin, 1980), Vol 88, pp. 1-196.
3. T. Sagawa, Y. Iguchi, M. Sasanuma, A. Ejiri, S. Fujiwara, M. Yokota, S. Yamaguchi, M. Nakamura, T. Sasaki, and T. Oshio, J. Phys. Soc. Jpn. 21, 2602 (1966).
4. For a short overview of SXAS, and of related techniques for CB DOS studies see: J. C. Fuggle and J. E. Inglesfield, Topics in Applied Physics, (Springer, Berlin, 1992), Vol. 69, pp. 1-24; and for a discussion of the theoretical approach(es) to understanding that part of the SXAS data, the near-edge structure, of relevance to our results, see P. J. Durham, in X-Ray Adsorption: Principles, Applications, Techniques of EXAFS, SEX-AFS and XANES, edited by D. C. Konigsberger and R. Prins (Wiley, New York, 1988), pp. 53-84.
5. For a short overview of SXAS, and of related techniques for CB DOS studies see: J. C. Fuggle and J. E. Inglesfield, Topics in Applied Physics, (Springer, Berlin, 1992), Vol. 69, pp. 1-24; and for a discussion of the theoretical approach(es) to understanding that part of the SXAS data, the near-edge structure, of relevance to our results, see P. J. Durham, in X-Ray Adsorption: Principles, Applications, Techniques of EXAFS, SEX-AFS and XANES, edited by D. C. Konigsberger and R. Prins (Wiley, New York, 1988), pp. 53-84.
6. L. Marton, L. B. Leder, and H. Mendlovitz, Adv. Electron. Electron Phys. 7, 183 (1955).
7. S. E. Schnatterly Solid State Phys. 34, 275 (1979).
8. R. F. Egerton, Electron Energy-Loss Spectroscopy in the Electron Microscope (Plenum, New York, 1986).
9. J. Fink, Adv. Electron. Electron Phys. 75, 121 (1989); Topics in Applied Physics (Springer, Berlin, 1992), Vol. 69, pp. 203-241.
10. J. Fink, Adv. Electron. Electron Phys. 75, 121 (1989); Topics in Applied Physics (Springer, Berlin, 1992), Vol. 69, pp. 203-241.
11. W J. Pardee, W. D. Mahan, D. E. Eastman, R. A. Pollak, L. Ley, F. R. McFeely, S. P. Kowalczyk, and D. A. Shirley, Phys. Rev. B 11, 3614 (1975).
12. P. M. Th. M. van Attekum and J. M. Trooster, Phys. Rev. B 18, 3872 (1978).
13. P. Steiner, H. Höchst, and S. Hüfner, Z. Phys. B 30, 129 (1978); A. Bernhard, Fr. Reinert, Th. Engel, P. Steiner, and S. Hüfner, Deutsche Physik. Gesellschaft Tagung, Münster, Germany, 1993 Abstract O-18.6; A. Bernhard, Diplomarbeit thesis, 1994.
14. P. Steiner, H. Höchst, and S. Hüfner, Z. Phys. B 30, 129 (1978); A. Bernhard, Fr. Reinert, Th. Engel, P. Steiner, and S. Hüfner, Deutsche Physik. Gesellschaft Tagung, Münster, Germany, 1993 Abstract O-18.6; A. Bernhard, Diplomarbeit thesis, 1994.
15. F. Yubero and S. Tougaard, Phys. Rev. B 46, 2486 (1992); Surf. Interface Anal. 19, 269 (1992).
16. F. Yubero and S. Tougaard, Phys. Rev. B 46, 2486 (1992); Surf. Interface Anal. 19, 269 (1992).
17. Because of a potassium impurity in our Al source material, the W substrate was held at T=600-675 K during the deposition of Al. This allowed Al films to be deposited while keeping K levels below AES detection limits. For the results presented here, the Ni films were deposited onto oxidized Al films. Deposition of clean Ni was continued until there was no AES evidence of the underlying aluminum or oxygen.
18. H. H. Madden, R. Landers, G. G. Kleiman, and D. M. Zehner (in preparation).
19. T. Aiyama and K. Yada, J. Phys. Soc. Jpn. 36, 1554 (1974).
20. H. H. Madden, Anal. Chem. 50, 1388 (1978). Convolution arrays for smoothing were calculated using Eq. II in Table I of this reference. The 1st derivative arrays were calculated using Eq. V.
21. P. H. van Cittert, Z. Phys. 69, 308 (1931).
22. H. C. Burger and P. H. van Cittert, Z. Phys. 79, 722 (1932); 81, 428 (1933).
23. H. C. Burger and P. H. van Cittert, Z. Phys. 79, 722 (1932); 81, 428 (1933).
24. For a discussion of loss deconvolution see Ref. 21. The "proper" amount of losstail scaling for processing AES data is guided by the criterion that Auger signals should be finite in energy width, so that they should approach zero intensity smoothly around 10-15 eV below the high energy thresholds. Such behavior reduces the average upward slope in the loss-corrected spectrum after the threshold region. For Ni, this required that we increase the strength of the loss tail of the experimentally measured system response function (see Fig. 3). The system response functions for Be and Al loss deconvolution in Fig. 3 were found to satisfy this criterion as measured, so that no scaling of the loss tail was done in either of these two cases. We should note that the shape of the final N(E) spectrum is sensitive to the scaling used for the loss tail of the response function (e.g., for Ni, utilizing no scaling produces a step at threshold, in contrast to the peak in Fig. 5).
25. H. H. Madden, Surf. Sci. 126, 80 (1983); H. H. Madden and J. E. Houston, J. Appl. Phys. 47, 3071 (1976).
26. H. H. Madden, Surf. Sci. 126, 80 (1983); H. H. Madden and J. E. Houston, J. Appl. Phys. 47, 3071 (1976).
27. For a bibliography of references covering SXAS investigations to 1987/ 88, see: A. Meisel, G. Leonhardt, and R. Szargan, X-Ray Spectra and Chemical Binding, Springer Series in Chemical Physics (Springer, Berlin, 1989), pp. 345-451.
28. O. W. Richardson and C. B. Bazzoni, Philos. Mag. 42, 1015 (1921); R. L. Park, J. E. Houston, and D. G. Schreiner, Rev. Sci. Instrum. 41, 1810 (1970).
29. O. W. Richardson and C. B. Bazzoni, Philos. Mag. 42, 1015 (1921); R. L. Park, J. E. Houston, and D. G. Schreiner, Rev. Sci. Instrum. 41, 1810 (1970).
30. J.C. Fuggle, Topics in Applied Physics (Springer, Berlin, 1992), Vol. 69, pp. 307-337.
31. A. P. Lukirskii and I. A. Brytov, Sov. Phys. Solid State 6, 33 (1964).
32. N. Swanson and K. Codling, J. Opt. Soc. Am. 58, 1192 (1968).
33. R. Haensel, G. Keitel, B. Sonntag, C. Kunz, and P. Schreiber, Phys. Status Solidi A 2, 85 (1970).
34. T. L. Loucks and P. H. Cutler, Phys. Rev. 133, A819 (1964); an extended CB DOS curve from these authors is presented in Ref. 2 above.
35. P. O. Nilsson, G. Arbman, and T. Gustafsson, J. Phys. F 4, 1937 (1974).
36. P. O. Nilsson and J. Kanslci, Surf. Sci. 37, 700 (1973).
37. A. M. Bradshaw and W. Wyrobisch, J. Electron Spectrosc. Relat. Phenom. 7, 45 (1975).
38. See review articles: R. L. Park and J. E. Houston, J. Vac. Sci. Technol. 11, 1 (1974); A. M. Bradshaw, in Surface and Defect Properties of Solids, edited by M. W. Roberts and J. M. Thomas (Chemical Society, Burlinghouse, London, 1974), Vol. 3, pp. 153-183.
39. See review articles: R. L. Park and J. E. Houston, J. Vac. Sci. Technol. 11, 1 (1974); A. M. Bradshaw, in Surface and Defect Properties of Solids, edited by M. W. Roberts and J. M. Thomas (Chemical Society, Burlinghouse, London, 1974), Vol. 3, pp. 153-183.
40. S. Nishiyama and H. Fujimoto, J. Phys. Soc. Jpn. 36, 1614 (1974); for more recent Al-BIS spectrum see Fig. 10.9 in Ref. 24 above.
41. I. Nagakura, Sci. Rep. Res. Inst. Tohoku Univ. A 48, 37 (1964) (as reported in Fig. 3 of Ref. 2 above).
42. H. Petersen and C. Kunz, Phys. Rev. Lett. 35, 863 (1975).
43. J. J. Ritsko, S. E. Schnatterly, and P. C. Gibbons, Phys. Rev. Lett. 32, 671 (1974).
44. J. W. D. Connolly, Int. J. Quantum Chem. IIIs, 807 (1970).
45. In Ref. 24, see Figs. 10.9 and 10.10.
46. N. J. Zaluzec, Ultramicroscopy 9, 319 (1982).
47. C. T. Chen, F. Sette, Y. Ma, and S. Modesti, Phys. Rev. B 42, 7262 (1990).
48. W. Speier, J. Phys. C: Solid State Phys. 21, L1183 (1988).
49. V. L. Moruzzi, J. F. Janak, and A. R. Williams, Calculated Electronic Properties of Metals (Pergamon, New York, 1978).
50. T. Shiraiwa, T. Isimura, and M. Sawada, J. Phys. Soc. Jpn. 13, 847 (1958).
51. A. Bianconi, in X-Ray Absorption: Principles, Applications, Techniques of EXAFS, SEXAFS and XANES, edited by D. C. Konigsberger and R. Prins (Wiley, New York, 1988) pp. 537-662.
52. O. L. Krivanek, Y. Tanishiro, K. Takayanagi, and K. Yagi, Ultramicroscopy 11, 215 (1983).
53. J. E. Houston, J. Vac. Sci. Technol. 12, 255 (1975); and unpublished results.
54. D. R. Jennison, H. H. Madden, and D. M. Zehner, Phys. Rev. B 21, 430 (1980).
55. D. M. Pease and T. K. Gregory, Solid State Commun. 18, 1133 (1976).
56. C. Sénémaud, Phys. Rev. B 18, 3930 (1978); see also Fig. 6.24 (p. 248) in Ref. 22 above.
57. 23)-SXAS results for solid Al.