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Volumn 16, Issue 4, 1998, Pages 2376-2380
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Molecular beam epitaxy and interface reactions of layered GaSe growth on sapphire (0001)
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0032336859
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.581355 Document Type: Article |
Times cited : (17)
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References (11)
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