A subnanosecond-scale current switch-off in high-power semiconductor SOS diodes

Doklady Physics

Volumn 43, Issue 6, 1998, Pages 349-351

  Lyubutin, S K ^a   Mesyats, G A ^a   Rukin, S N ^a   Slovikovskii, B G ^a  

^a INSTITUTE OF ELECTROPHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032329853     PISSN: 10283358     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. Mesyats, G.A., Rukin, S.N., Lyubutin, S.K., et al., Proc. X Int. IEEE Pulsed Power Conf., Albuquerque, 1995, vol. 1, pp. 298-305.
2. Lyubutin, S. K., Mesyats, G.A., Rukin, S.N., et al., Proc. XI Int. Conf. on High Power Particle Beams, Prague, 1996, vol. 1, pp. 135-138.
3. Darznek, S.A., Kotov, Yu.A., Mesyats, G.A., and Rukin, S.N., Dokl. Akad. Nauk, 1994, vol. 334, no. 3, pp. 304-306 [Phys.-Dokl. (Engl. transl.), vol. 39, no. 2, pp. 105-107].
4. Darznek, S.A., Kotov, Yu.A., Mesyats, G.A., and Rukin, S.N., Dokl. Akad. Nauk, 1994, vol. 334, no. 3, pp. 304-306 [Phys.-Dokl. (Engl. transl.), vol. 39, no. 2, pp. 105-107].
5. Darznek, S.A., Mesyats, G.A., and Rukin, S.N., Zh. Tekh. Fiz., 1997, vol. 67, no. 10, pp. 64-70.