On the Hopping and Band Conductivity in Molecular-Beam Epitaxial Low-Temperature Grown GaAs

Physica Status Solidi (B) Basic Research

Volumn 205, Issue 1, 1998, Pages 125-128

  Morvic, M ^a   Betko, J ^a   Novak J ^a   Kordos P ^b   Forster A ^b  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032326920     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199801)205:1<125::AID-PSSB125>3.0.CO;2-B     Document Type: Article

References (4)

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2. J. NOVÁK, M. MORVIC, J. BETKO, A. FÖRSTER, and P. KORDOŠ, Mater. Sci. Eng. B 40, 58 (1996).
3. B. I. SHKLOVSKII, Fiz. Tekh. Poluprov. 6, 1197 (1972).
4. P. KORDOŠ, A. FÖRSTER, J. BETKO, M. MORVIC, and J. NOVÁK, Appl. Phys. Lett. 67, 983 (1995).