The application of high density plasma sources for optoelectronic device fabrication

Vacuum

Volumn 51, Issue 4, 1998, Pages 511-517

  Humphreys, Bedwyr ^a   Govett, Matthew ^a   Goodyear, Andrew ^a  

^a OXFORD INSTRUMENTS PLASMA TECHNOLOGY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ETCHING; HALOGEN COMPOUNDS; HYDROCARBONS; MASKS; MORPHOLOGY; OPTOELECTRONIC DEVICES; PLASMA DENSITY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

GALLIUM NITRIDE;

PLASMA SOURCES;

EID: 0032321195     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(98)00243-7     Document Type: Article

References (6)

1. Kaindl, J. et al., J. Electrochem. Soc., 1995, 142(7), 2418-2424.
2. Murrell, A.J. et al., GaAs IC Symposium, 1992, pp. 173-175.
3. Hayes, T.R. et al., J. Appl. Phys., 1990, 68(2), 785-792.
4. Dzioba, S. et al., Appl. Phys. Lett., 1993, 62(20), 2486-2488.
5. Peyre, J. L. et al., CIP '95 Proceedings, 10th International Colloquium on Plasma Processes, 1995, pp. 179-181.
6. Buchmann, P. et al., Chemically assisted ion beam etching for high quality laser mirrors, private correspondence.