RHEED investigation of limiting thickness epitaxy during low-temperature Si-MBE on (100) surface

Thin Solid Films

Volumn 336, Issue 1-2, 1998, Pages 179-182

  Nikiforov, A I ^a   Kanter, B Z ^a   Pchelyakov, O P ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Limiting thickness; MBE; RHEED; Silicon

Indexed keywords

LOW TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

LIMITING THICKNESS EPITAXY;

SEMICONDUCTING FILMS;

EID: 0032320731     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01234-6     Document Type: Article

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