First order metal-insulator transition in two-dimensional disordered systems

Annalen der Physik (Leipzig)

Volumn 7, Issue 5-6, 1998, Pages 363-371

  Xiong, Shi Jie ^a   Katomeris, G N ^b   Evangelou, S N ^b  

^a NANJING UNIVERSITY   (China)

^b UNIVERSITY OF IOANNINA   (Greece)

Author keywords

2D Metal; Localization; Metal insulator transition

Indexed keywords

CARRIER MOBILITY; ELECTRIC CONDUCTIVITY OF SOLIDS; MAGNETIC FIELD EFFECTS; MOS DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

FIRST ORDER METAL INSULATOR TRANSITIONS (MIT); TWO-DIMENSIONAL DISORDERED SYSTEMS;

METAL INSULATOR BOUNDARIES;

EID: 0032319923     PISSN: 00033804     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1521-3889(199811)7:5/6<363::aid-andp363>3.0.co;2-5     Document Type: Article

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