Analysis of gate tunneling current in ultra-thin oxide MOSFET's

Annual Device Research Conference Digest

Volumn , Issue , 1998, Pages 14-15

  Erdogan, M U ^a   Chang, M C ^a   Bowen, C ^a   Chatterjee, A ^a   Seitchik, J ^a   Shichijo, H ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; GATES (TRANSISTOR); LEAKAGE CURRENTS; LOGIC CIRCUITS; MATHEMATICAL MODELS; OXIDES; SEMICONDUCTOR DEVICE STRUCTURES;

GATE TUNNELING CURRENT; GATE VOLTAGE; SPICE SIMULATION; SURFACE POTENTIAL;

MOSFET DEVICES;

EID: 0032319706     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)