Raman scattering and high resolution electron microscopy studies of metal-organic chemical vapor deposition-tungsten disulfide thin films

Thin Solid Films

Volumn 335, Issue 1-2, 1998, Pages 106-111

  Chung, J W ^a   Dai, Z R ^a   Adib, K ^a   Ohuchi, F S ^a  

^a University of Washington   (United States)

Author keywords

First order Raman; High resolution electron microscopy; Lattice image; Metal organic chemical vapor deposition; Preferred orientation; Raman scattering; Second order Raman; Tungsten disulfide

Indexed keywords

BRILLOUIN SCATTERING; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; FILM GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHONONS; RAMAN SPECTROSCOPY; SILICON; SUBSTRATES; TUNGSTEN COMPOUNDS;

LATTICE IMAGE; PREFERRED ORIENTATION; TUNGSTEN DISULFIDE THIN FILMS;

THIN FILMS;

EID: 0032319693     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00954-7     Document Type: Article

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