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Volumn 24, Issue 4, 1998, Pages 295-298

Multiple wavelength electroluminescence and laser generation in p-i-n resonant tunneling heterostructures

(10) Toropov, A A a Shubina, T V a Lebedev, A V a Mel'tser, B Ya a Shaposhnikov, S V a Tkatchman, M G a Kop'ev, P S a Fu, Y b Cao, S M b Willander, M b

a IOFFE INSTITUTE (Russian Federation)

b UNIVERSITY OF GOTHENBURG (Sweden)

Author keywords

Bistability; Electroluminescence; GaAs AlxGa1 xAs

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; ELECTRON TUNNELING; GRADIENT INDEX OPTICS; LASER APPLICATIONS; OPTICAL BISTABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM GALLIUM ARSENIDE;

HETEROJUNCTIONS;

EID: 0032319466 PISSN: 07496036 EISSN: None Source Type: Journal
DOI: 10.1006/spmi.1996.0226 Document Type: Article

Times cited : (3)

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