Refractive index modification during deposition of silicon oxynitride films prepared by reactive laser ablation

Materials Research Society Symposium - Proceedings

Volumn 526, Issue , 1998, Pages 97-102

  Machorro, R ^a   Soto, G ^a   Samano, E C ^a   Cota Araiza, L ^a  

^a UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; AUGER ELECTRON SPECTROSCOPY; ELLIPSOMETRY; LASER ABLATION; OPTICAL FILTERS; OXIDATION; REACTION KINETICS; REFRACTIVE INDEX; SILICA; SILICON NITRIDE; STOICHIOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

EFFECTIVE MEDIUM APPROXIMATION (EMA); KINETIC ELLIPSOMETRY; SILICON OXYNITRIDE; SPECTRO-ELLIPSOMETRY;

OPTICAL FILMS;

EID: 0032319356     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-526-97     Document Type: Conference Paper

References (11)