Effect of MESFET structures on frequency dispersion of drain conductance and its impact on mark density effect of high speed logic ICs

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1998, Pages 107-110

  Nakajima, Shigeru ^a   Tsumura, Eiji ^a   Yanagisawa, Masaki ^a   Sakurada, Takashi ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIGITAL INTEGRATED CIRCUITS; ELECTRIC CONDUCTANCE; LOGIC CIRCUITS; SEMICONDUCTOR DEVICE STRUCTURES;

DRAIN CONDUCTANCE; FREQUENCY DISPERSION; MARK DENSITY EFFECT;

MESFET DEVICES;

EID: 0032318330     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)