Size, position and direction control on GaAs and InAs nanowhisker growth

Superlattices and Microstructures

Volumn 24, Issue 6, 1998, Pages 453-458

  Shimada, T ^a   Hiruma, K ^a   Shirai, M ^a   Yazawa, M ^a   Haraguchi, K ^a   Sato, T ^a   Matsui, M ^a   Katsuyama, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

GaAs; InAs; MOCVD; Self organized; Whisker

Indexed keywords

CATALYSIS; CRYSTAL ORIENTATION; CRYSTAL WHISKERS; HETEROJUNCTIONS; LITHOGRAPHY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

NANOWHISKERS;

SEMICONDUCTOR GROWTH;

EID: 0032318279     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0270     Document Type: Article

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