Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low pressure chemical vapor deposition

Proceedings of the International Symposium on Electrical Insulating Materials

Volumn , Issue , 1998, Pages 131-134

  Kato, H ^a   Seol, K S ^a   Toyoda, T ^a   Ohki, Y ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC FILMS; ELECTRON TRAPS; ELECTRONIC STRUCTURE; FILM GROWTH; HOLE TRAPS; OZONE; SILICON NITRIDE; STOICHIOMETRY; TANTALUM COMPOUNDS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

ELECTRIC INSULATING MATERIALS;

EID: 0032317615     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)