InGaN/GaN field emitters with a piezoelectrically-lowered surface barrier

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

Volumn , Issue , 1998, Pages 283-284

  Underwood, Robert D ^a   Kozodoy, Peter ^a   Keller, Stacia ^a   DenBaars, Steven P ^a   Mishra, Umesh K ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; NITRIDES; PIEZOELECTRICITY; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; THRESHOLD VOLTAGE;

ELECTRON AFFINITY; FIELD EMITTERS; FOWLER-NORDHEIM PLOTS; INDIUM GALLIUM NITRIDE; SEPPEN-KATAMUKI CHARTS; SURFACE ENERGY BARRIER HEIGHT; TURN ON VOLTAGE;

FIELD EMISSION CATHODES;

EID: 0032315164     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)